Engineering and investigating the control of semiconductor surfaces and interfacesWILKS, S. P.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 9, pp R77-R90, issn 0022-3727Article

Study of a novel Si/SiC hetero-junction MOSFETCHEN, L; GUY, O. J; JENNINGS, M. R et al.Solid-state electronics. 2007, Vol 51, Num 5, pp 662-666, issn 0038-1101, 5 p.Article

The control and modification of metal-semiconductor interfaces using multi quantum barriersKESTLE, A; WILKS, S. P; WESTWOOD, D. I et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 145-148, issn 0921-5107Conference Paper

Evaluation of ohmic contacts to GaAs(100) and (111)B using InAs/GaAs short period superlattice and InGaAs intermediate layersHOOPER, S. E; WILKS, S. P; ELLIOT, M et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 4, pp 1727-1730, issn 1071-1023Conference Paper

XPS investigation of vacuum annealed vertically aligned ultralong ZnO nanowiresMAFFEIS, T. G. G; PENNY, M. W; CASTAING, A et al.Surface science. 2012, Vol 606, Num 1-2, pp 99-103, issn 0039-6028, 5 p.Article

Investigation of the 4H-SiC surfaceGUY, O. J; LODZINSKI, M; RIMMER, N et al.Applied surface science. 2008, Vol 254, Num 24, pp 8098-8105, issn 0169-4332, 8 p.Conference Paper

Study of 4H-SiC trench MOSFET structuresCHEN, L; GUY, O. J; JENNINGS, M. R et al.Solid-state electronics. 2005, Vol 49, Num 7, pp 1081-1085, issn 0038-1101, 5 p.Article

The correlation of electronic properties with nanoscale morphological variations measured by SPM on semiconductor devicesDUNSTAN, P. R; MAFFEÏS, T. G. G; ACKLAND, M. P et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 42, pp S3095-S3112, issn 0953-8984Article

The passivation of atomic scale defects present on III-V semiconductor laser facets: an STM/STS investigationWILKS, S. P; TENG, K. S; DUNSTAN, P. R et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 467-474, issn 0169-4332Conference Paper

An XPS study of metal-Cd_xHg_1-xTe (CMT x=0.225) interfaces for surfaces prepared in vacuum (110) and by chemical etching (100). a comparison of the interfacial stabilityWILKS, S. P; WILLIAMS, R. H; WILLIAMS, J. P et al.Semiconductor science and technology. 1994, Vol 9, Num 9, pp 1706-1712, issn 0268-1242Article

STM-STS investigation of vacuum annealed ZnO nanoribbonsMAFFEIS, T. G. G; PENNY, M. W; GARBUTT, J. D. W et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 2, pp 282-285, issn 1862-6300, 4 p.Conference Paper

Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopyCOBLEY, R. J; TENG, K. S; BROWN, M. R et al.Applied surface science. 2010, Vol 256, Num 19, pp 5736-5739, issn 0169-4332, 4 p.Conference Paper

Cross-sectional scanning tunneling microscopy and spectroscopy of strain in buried heterostructure lasersCOBLEY, R. J; TENG, K. S; MAFFEIS, T. G. G et al.Surface science. 2006, Vol 600, Num 14, pp 2857-2859, issn 0039-6028, 3 p.Article

A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100)BURGESS, S. R; COWIE, B. C. C; WILKS, S. P et al.Applied surface science. 1996, Vol 104-05, pp 152-157, issn 0169-4332Conference Paper

Improvements to the Schottky barrier heights of intimate metal-InGaAs contacts by low temperature metallisationCLARK, S. A; WILKS, S. P; KESTLE, A et al.Surface science. 1996, Vol 352-54, pp 850-854, issn 0039-6028Conference Paper

Antimony capping and decapping of InAlSb(100)CLARK, S. A; CAIRNS, J. W; WILKS, S. P et al.Surface science. 1995, Vol 336, Num 1-2, pp 193-198, issn 0039-6028Article

X-ray photoelectron spectroscopy studies on the formation of chromium contacts to single-crystal CVD diamondDONEDDU, D; GUY, O. J; DUNSTAN, P. R et al.Surface science. 2008, Vol 602, Num 6, pp 1135-1140, issn 0039-6028, 6 p.Article

Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniquesACKLAND, M. P; DUNSTAN, P. R; BROWN, M. R et al.Applied surface science. 2008, Vol 255, Num 3, pp 649-652, issn 0169-4332, 4 p.Conference Paper

Improved Schottky contacts to annealed 4H-SiC using a protective carbon cap : Investigated using current voltage measurements and atomic force microscopyGUY, O. J; DONEDDU, D; CHEN, L et al.Diamond and related materials. 2006, Vol 15, Num 9, pp 1472-1477, issn 0925-9635, 6 p.Article

Electrical barriers at semiconductor interfaces : Some reflections and future challengesWILLIAMS, R. H; TENG, K. S; WILKS, S. P et al.Journal de physique. IV. 2006, Vol 132, pp 41-47, issn 1155-4339, 7 p.Conference Paper

Effect of a ZnSe intralayer on the Si/Ge(111) heterojunction band offsetsPAN, M; WILKS, S. P; DUNSTAN, P. R et al.Thin solid films. 1999, Vol 343-4, pp 605-608, issn 0040-6090Conference Paper

The electronic and structural properties of the silicon-gallium arsenide(110) interfaceDUNSTAN, P. R; WILKS, S. P; BURGESS, S. R et al.Applied surface science. 1998, Vol 123-24, pp 533-537, issn 0169-4332Conference Paper

Creating room temperature Ohmic contacts to 4H-SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopyGUY, O. J; POPE, G; BLACKWOOD, I et al.Surface science. 2004, Vol 573, Num 2, pp 253-263, issn 0039-6028, 11 p.Article

Macroscopic and microscopic investigations of the effect of gas exposure on nanocrystalline SnO₂ at elevated temperatureMAFFEÏS, T. G. G; PENNY, M; TENG, K. S et al.Applied surface science. 2004, Vol 234, Num 1-4, pp 82-85, issn 0169-4332, 4 p.Conference Paper

STM patterning of SnO₂ nanocrystalline surfacesMAFFEIS, T. G. G; OWEN, G. T; PENNY, M et al.Applied surface science. 2004, Vol 234, Num 1-4, pp 2-10, issn 0169-4332, 9 p.Conference Paper